r 201311a 1/5 npn dual npn high voltage transistors in a single packa ge DB805D order codes marking halogen free package packaging DB805D DB805D no dip - 8 tube main characteristics i c 4a v ceo 400v p tot tamb = 25 c single transistor 3w p tot tcase = 25 c single transistor 45w package dip-8 220 v (cfl) applications compact fluorescent lamp (cfl) 220 v mains electronic ballast for fluorescent lighting features high breakdown voltage low vce(sat) fast switching speed simplified circuit design reduced component count order message internal schematic diagram
r DB805D 201311a 2/5 absolute ratings (tc=25 ) pulse 5ms pulse test: pulse width = 5.0 ms, duty cycle < 10%. electrical characteristic thermal characteristic parameter symbol value(min) value(max) unit () thermal resistance junction ambient (single transis tor) rth(j-c) - 42 /w ( ) thermal resistance junction case (single transistor ) rth(j-c) - 2.7 /w parameter symbol value unit collector- emitter voltage v be =0 v ces 700 v collector- emitter voltage i b =0 v ceo 400 v emitter-base voltage v ebo 9 v collector current dc i c 4 a collector current pulse i cp 8 a base current dc i b 2 a base current pulse i bp 4 a total dissipation ( tamb = 25 c single transistor ) p tot 3 w total dissipation ( tcase = 25 c single transistor ) p tot 45 w total dissipation (to-220c/262/263) p c 75 w junction temperature t j 150 storage temperature t stg -55~+150 parameter tests conditions value(min) value(typ) value(max) unit v(br) ceo i c =10ma,i b =0 400 - - v v(br) cbo i c =1ma,i b =0 700 - - v v(br) ebo i e =1ma,i c =0 9 - - v i cbo v cb =700v, i e =0 - - 100 a i ceo v ce =400v,i b =0 - - 50 a i ebo v eb =9v, i c =0 - - 10 a hfe(1) v ce =10v, i c =500ma 20 - 30 hfe(2) v ce =5v, i c =2a 5 - - v ce(sat) i c =2a, i b =0.4a - - 1.0 v v be(sat) i c =2a, i b =0.5a - - 1.8 v tf - - 0.7 s ts v cc =24v i c =2a,i b1 =-i b2 =0.4a - - 5 s ft v ce =10v, i c =0.5a 4 - - mhz
r DB805D 201311a 3/5 v ce sat v be sat electrical characteristics (curves) h fe power derating factor hfe C i c v be sat - i c v ce(sat) - i c p c -t c
r DB805D 201311a 4/5 package mechanical data unit mm dip-8 mm a 3.71-4.31 a1 >0.51 a2 3.20-3.60 b 0.38-0.57 b1 1.47-1.57 c 1.524(typ.) d 9.00-9.40 e 6.20-6.60 e1 7.32-7.92 e 2.54(typ.) l 3.00-3.60 e2 8.40-9.00
r DB805D 201311a 5/5 appendix revision history date last rev. new rev. description of changes 2013-11-13 201311a 1. 2. 3. 4. note 1. jilin sino-microelectronics co., ltd sales its product either through direct sales or sales agent , thus, for customers, when ordering , please check with our company. 2. we strongly recommend customers check carefully on the trademark when buying our product, if there is any question, please dont be hesitate to contact us. 3. please do not exceed the absolute maximum ratings of the device when circuit designing. 4. jilin sino-microelectronics co., ltd reserves the right to make changes in this. specification sheet and is subject to change without prior notice. 99 132013 86-432-64678411 86-432-64665812 www.hwdz.com.cn 99 132013 86-432-64675588 64675688 64678411-3098/3099 : 86-432-64671533 contact jilin sino-microelectronics co., ltd. add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel 86-432-64678411 fax 86-432-64665812 web site www.hwdz.com.cn market department add: no.99 shenzhen street, jilin city, jilin province, china. post code: 132013 tel: 86-432-64675588 64675688 64678411-3098/3099 fax: 86-432-64671533
|
